Is there any evidence that hot electrons have different path lengths
in p and n type silicon ? The information that I have been given
suggests that inelastic scattering is dominated by e-h pair
production. Apparently the pair production scattering rates depend on
the electron energy with respect to the valence band maximum.
Therefore the path length should be different in p and n type, but so
far I have found no evidence for this....
Thankyou
Chris Walker
