1. The process begins with a <100>, p-type substrate.
2. A 400 Angstrom pad layer of silicon dioxide is grown.
3. An 800 Angstrom layer of silicon nitride is deposited on top of the
silicon dioxide.
4. The nitride is stripped from the areas outside of the active
regions.
5. Boron is ion-implanted to increase the p doping at the surface in
the field regions.
6. The field regions are then oxidized for three hours at 1000 degrees
centigrade in a wet
oxygen ambient.
7. Etch to the silicon surface in the active regions.
8. Ion implant boron to set the threshold voltage of the device.
9. Grow the 400 Angstrom gate oxide.
10. Deposit a half micron layer of polysilicon.
11. Dope it with phosphorus using a predeposition furnace.
12. Etch the polysilicon from the areas outside of the gate regions.
13. Ion implant arsenic to form the source and gate regions.
14. Drive-in the source and drain diffusions for 30 minutes at 1000
degrees centigrade in a
dry oxygen ambient.
15. Open the contact holes in the gate, source, and drain regions.
16. Use CVD to deposit phosphorus doped silicon dioxide over the wafer
surface.
17. Reflow the glass at 1000 degrees for 30 minutes.
18. Reopen the contact holes and deposit aluminum.
how can i calculate electrical charasteristics of this nmos and if i
simulate with suprem how can i calculate? Can someone give me
sugggestions ?
Thanks
