I performed the below experiment and got the below results about
passivation anneal and leakage current.
1) Conditions: Passivation anneal + Polyimide + Polyimide cure
Results: Good NMOS and PMOS transistor leakage, around 1pA/um.
2) Conditions: Passivation anneal, no Polyimide, no Polyimide cure
Results: Poor NMOS and PMOS transistor leakage, around 100pA/um.
3) Conditions: Passivation anneal + Polyimide cure
Results: Good NMOS leakage (1pA/um), but sometimes high PMOS
transistor leakage, around 10pA/um.
I think the Polyimide cure helps to improve device leakage. However,
I don't understand
1) Why in experiment 3, NMOS is good while PMOS is bad sometimes.
Many thanks if anyone can share with me his/her experience.
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