Hello All
I appreciate if anyone can share with me why when silicon is doped
with Na of dopants uniformly, the depletion region is only restricted
in a so-called maximum depletion width(but not the entire uniformly
doped Silicon)?
Mobile electron(or holes) created by dopant which later causing total
of Na number of ionized atom in the depletion region. Since it is
uniformly doped Silicon, shouldn`t the ionized atom exist across the
entire Silicon area and not just in a thin sheet of depletion region?
I shold have misunderstood certain concept and really looking forward
to hear from people who can enlighten.
Thank you
Jason
